Defects in Semiconductors Volume 91 1st Edition by Lucia Romano, Vittorio Privitera, Chennupati Jagadish ISBN 0128019409 9780128019405

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Product details:

ISBN 10: 0128019409

ISBN 13: 9780128019405

Author:  Lucia Romano, Vittorio Privitera, Chennupati Jagadish 

Defects in Semiconductors Volume 91 1st Edition: 

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials’ behavior in response to electrical or mechanical fields.

The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.

• Expert contributors
• Reviews of the most important recent literature
• Clear illustrations
• A broad view, including examination of defects in different semiconductors

 

Defects in Semiconductors Volume 91 1st Edition Table of contents:

Chapter One: Role of Defects in the Dopant Diffusion in Si

• Abstract

1. Introduction
2. The Framework of Diffusion–Reaction Equations
3. Diffusion of Substitutional Dopants via Intrinsic Point Defects
4. Dopants in Silicon and Their Diffusion Mechanisms
5. Nonequilibrium Processes
6. Precipitates, Clusters, and Complexes
7. Interface Segregation

Chapter Two: Electron and Proton Irradiation of Silicon

• Abstract

1. Introduction
2. Irradiation of Silicon: General Issues
3. The Elementary Act: Frenkel Pair
4. Branching Reactions: Basic Considerations
5. Complexes Consisting of the Native Defects
6. Summary

Chapter Three: Ion Implantation Defects and Shallow Junctions in Si and Ge

• Abstract

1. Introduction
2. Generation and Accumulation of Ion Implantation Damage
3. Damage Evolution and Defect Agglomerates
4. Role of Defects in Shallow Junction Formation in Si
5. Role of Defects in Shallow Junction Formation in Ge

Chapter Four: Defective Solid-Phase Epitaxial Growth of Si

• Abstract

1. Introduction
2. Role of Initial Growth Interface Morphology
3. “Buried” Amorphous Layers
4. Substrate Orientation Effects
5. Stressed SPEG Resulting from Impurities
6. Externally Stressed SPEG
7. Interaction of the Growth Interface with A SiOx Region
8. Defects Occurring at Mask Edges
9. Summary

• Acknowledgments

Chapter Five: Nanoindentation of Silicon and Germanium

• Abstract

1. Introduction and Background
2. Crystalline Si
3. Amorphous and Deposited Si Studies
4. Electrical Measurements
5. Ge Under Indentation
6. Summary and Conclusions

• Acknowledgments

Chapter Six: Analytical Techniques for Electrically Active Defect Detection

• Abstract

1. Introduction
2. Basic Properties of Deep Level Defects
3. Resistivity-Based Deep Level Analysis
4. Deep Level Transient Spectroscopy
5. AS of Deep Levels
6. Diode Lifetime Analysis
7. Summary and Outlook

Chapter Seven: Surface and Defect States in Semiconductors Investigated by Surface Photovoltage

• Abstract

1. Introduction
2. Physical Basis of the Method
3. Experimental Details
4. Applications of the SPV Method
5. Conclusions

Chapter Eight: Point Defects in ZnO

• Abstract

1. Introduction
2. Donor Impurities
3. Hydrogen Donors
4. Isoelectronic Centers
5. Copper
6. Lithium
7. Sodium
8. Nitrogen
9. Transition Metals
10. Native Defects
11. Nanocrystals
12. Unidentified Defects
13. Conclusions

• Acknowledgments

Chapter Nine: Point Defects in GaN

• Abstract

1. Introduction
2. Theoretical Predictions
3. Growth Methods and SIMS Analysis
4. Defects Revealed by PL
5. Point Defects Revealed by DLTS and Other Capacitance Techniques
6. Vacancy-Related Defects Revealed by PAS
7. Point Defects Revealed by Magnetic Resonance Techniques
8. Summary

• Acknowledgments

Chapter Ten: Point Defects in Silicon Carbide

• Abstract

1. Introduction
2. The Silicon Vacancy (VSi) and the Carbon Vacancy (VC)
3. The Silicon Interstitial (SiI), the Carbon Interstitial (CI), and Antisite Defects (CSi, SiC, CSi–VC)
4. Hydrogen
5. Transition Metal Impurities
6. Final Remarks

 

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Lucia Romano,Vittorio Privitera,Chennupati Jagadish,Defects,Semiconductors,Volume 91