High speed heterostructure devices from device concepts to circuit modeling 1st Edition by Patrick Roblin ISBN 0521781523 9780521781527

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Product details: 

ISBN 10: 0521781523 

ISBN 13: 9780521781527

Author: Patrick Roblin

Table of contents: 

Required background
Outline for the reader
Recommendations for the instructor
Acknowledgements
Acknowledgements by Patrick Roblin
Acknowledgements by Hans Rohdin
Joint acknowledgements
List of abbreviations
Introduction
Ever shrinking high-speed devices
Quantum effects
Quantum devices
From quantum transport to Boltzmann equation
Ballistic transport versus drift-diffusion transport
Importance of a microscopic study
1 Heterostructure materials
1.1 Introduction
1.2 MBE technology
1.2.1 Lattice-matched systems
1.2.2 Pseudomorphic materials
1.2.3 The materials game and bandgap engineering
1.2.4 Limitations and applications of modern growth techniques
1.3 Crystal and reciprocal lattices
1.3.1 Crystals and lattices
1.3.2 The reciprocal lattice
1.3.3 Application to band structures
1.4 Conclusion
1.5 Bibliography
1.5.1 Recommended reading
1.5.2 References
1.6 Problems
2 Semiclassical theory of heterostructures
2.1 Introduction
2.2 Spatially-varying semiconductors
2.2.1 Semiconductor alloys
2.2.2 Modulation doping
2.3 The Anderson band-diagram model
2.4 The abrupt heterojunction case
2.5 Drift-diffusion transport model for heterostructures
2.6 I?V characteristics of p?n heterojunctions
2.7 The thermionic model of heterojunctions
2.8 Ballistic launching
2.9 The HBT
2.10 Conclusion
Appendix: Semiconductor parameter tables
2.11 Bibliography
2.11.1 Recommended reading
2.11.2 References
2.12 Problems
3 Quantum theory of heterostructures
3.1 Introduction
3.2 Band structures, Bloch functions and Wannier functions
3.2.1 The Schr?dinger equation
3.2.2 Electron in a periodic potential
3.2.3 Wannier functions
Proof of translation invariance
The Wannier picture
Eigenstate solution
The tight-binding band
The flat-band case
3.2.4 Three-dimensional crystal
3.3 Spatially-varying band
3.3.1 Heterojunction case (tight-binding approximation)
3.3.2 Definition of the electron particle current (flux)
Conservation equation
Total particle current definition
Flat-band case
3.3.3 Matching theory
3.3.4 Three-dimensional effects
3.4 Multi-band tridiagonal Wannier picture
3.4.1 Multi-band tridiagonal Wannier system
3.4.2 Effective-mass wave-matching for a two-band Wannier system
3.4.3 Comparison with a full-band model
3.5 Multi-band density of states
3.6 Conclusion
3.7 Bibliography
3.7.1 Recommended reading
3.7.2 References
3.8 Problems
4 Quantum heterostructure devices
4.1 Introduction
4.2 The accelerated band electron
4.2.1 Stark states and the Wannier ladder
Eigenstate solutions
Zener resonant tunneling
4.2.2 Time-dependent solutions and the Houston state
4.2.3 The Bloch oscillator
4.2.4 Coherent and squeezed Zener oscillations
4.3 Quantum wells
4.3.1 Rectangular quantum wells
4.3.2 Quantum well induced by an electric field
4.3.3 Quantum wells of arbitrary shapes
4.3.4 Full-band structure effects
4.3.5 2DEG
Density of states in k space
Density of states in E space
Fermi?Dirac statistics in a 2DEG
4.4 Resonant tunneling
4.4.1 Double-barrier system
4.4.2 Tunneling current and resonant tunneling
4.4.3 Charge distribution inside the well
4.4.4 Exchange correlation
4.4.5 Scattering induced broadening
4.4.6 Full-band structure effects
4.4.7 High-frequency and high-speed response
4.4.8 Resonant interband tunneling diodes (RITDs)
4.5 Superlattice
4.5.1 Periodic superlattices
4.5.2 Random superlattice
4.5.3 Quasi-crystals and Fibonacci superlattices
4.6 Conclusion
4.7 Bibliography
4.7.1 Recommended reading
4.7.2 References
4.8 Problems
5 Scattering processes in heterostructures
5.1 Introduction
5.2 Phonons and phonon scattering
5.2.1 Phonons
What is a phonon?
5.2.2 Spontaneous and stimulated emissions
5.2.3 Semiclassical phonon model
5.3 Polar scattering by optical phonons
5.4 Deformation potential scattering by acoustic phonons
5.5 Intervalley scattering by LO phonons
5.6 Interface roughness scattering
5.7 Alloy scattering
5.8 Electron?electron scattering
5.9 Conclusion
5.10 Bibliography
5.10.1 Recommended reading
5.10.2 References
5.11 Problems
6 Scattering-assisted tunneling
6.1 Introduction
6.2 Importance of three-dimensional scattering
6.3 Scattering-assisted tunneling theory
6.3.1 Semiclassical scattering picture
6.3.2 Matrix elements for the heterostructure Hamiltonian
6.3.3 Matrix elements for the interaction Hamiltonian
6.3.4 Envelope equations for sequential scattering
6.4 Transmission coefficient for scattering-assisted tunneling
6.5 Self-energy
6.6 The MSS algorithm
6.7 Scattering-parameter representation
6.8 Detailed balance and Pauli exclusion in MSS
6.9 Coupling functions for various scattering processes
6.10 Results for resonant tunneling structures
6.11 Conclusion
6.12 Bibliography
6.12.1 Recommended reading
6.12.2 References
6.13 Problems
7 Frequency response of quantum devices from DC to infrared
7.1 Introduction
7.2 Analytic solution for a uniform time-dependent potential
7.3 Radiation coupling with an external modulated electric field
7.4 Time-dependent tunneling theory
7.5 Small-signal response without self-consistent potential
7.6 Self-consistent solution
7.7 RTD conductances and capacitances
7.8 High-frequency response of the RTD
7.9 Microwave measurement of the C?V characteristics
7.10 DC bias instabilities
7.11 Infrared response of quantum devices
7.11.1 Modeling the infrared wave-guide
7.11.2 Coupling of quantum transport with infrared radiation
7.11.3 Optical absorption/emission coefficient
Simulation verification
7.11.4 Quantum cascade laser
7.12 Conclusion
7.13 Bibliography
8 Charge control of the two-dimensional electron gas
8.1 Introduction
8.2 2DEG population as a function of the Fermi energy
Approximate treatment
8.3 Equilibrium population of the 2DEG
8.4 Charge control of the 2DEG with a Schottky junction
8.5 C?V characteristics of the MODFET capacitor
8.6 I?V modeling of the Schottky junction
8.7 Conclusion
8.8 Bibliography
8.9 Problems
9 High electric field transport
9.1 Introduction
9.2 The Boltzmann equation
9.3 Electron transport in small electric fields
9.3.1 Uniform semiconductor case
9.3.2 Non-uniform semiconductor case
9.4 Electron transport in a large electric field
9.4.1 Uniform semiconductor case
9.4.2 Non-uniform semiconductor case
9.5 High-field transport: two-valley model
9.6 Negative differential mobility and the Gunn effect
9.7 Transient velocity overshoot in a time-varying field
9.8 Stationary velocity overshoot in short devices
9.9 Conclusion
9.10 Bibliography
9.10.1 Recommended reading
9.10.2 References
9.11 Problems
10 I?V model of the MODFET
10.1 Introduction
10.2 Long-and short-channel MODFETs
10.3 Saturation and two-dimensional effects in FETs
10.3.1 The Grebene?Ghandhi model
10.3.2 Channel opening: MOSFET saturation model
10.4 The extrinsic MODFET
10.5 Conclusion
10.6 Bibliography
10.6.1 Recommended reading
10.6.2 References
10.7 Problems
11 Small-and large-signal AC models for the long-channel MODFET
11.1 Introduction
11.1.1 fT and fmax figures of merit
11.1.2 MAG and MSG
11.1.3 Unilateral power gain of the wave-equation model
11.1.4 On the ordering of fT and fmax
11.2 The MOSFET wave-equation (long-channel case)
11.2.1 The large-signal MOSFET wave-equation
11.2.2 Exact small-signal solution of the MOSFET wave-equation
11.2.3 Frequency power series expansions of the y parameters
11.2.4 Dimensionless representation of the y parameters
11.2.5 First order equivalent circuit I
11.2.6 Range of validity of the RC small-signal equivalent circuit I
11.2.7 Alternative equivalent circuits for the intrinsic MODFET/MOSFET
11.3 Large-signal model of the long-channel MODFET/MOSFET
11.3.1 Charge conservation
11.3.2 Charge conservation in circuit simulators
11.4 Parasitics, extrinsic MODFET and parameter extraction
11.5 Conclusion
11.6 Bibliography
11.6.1 Recommended reading
11.6.2 References
11.7 Problems
12 Small-and large-signal AC models for the short-channel MODFET
12.1 Introduction
12.2 Small-signal model for the short-channel MOSFET
12.2.1 The velocity-saturated MOSFET wave-equation
12.2.2 Exact solution of the velocity-saturated MOSFET wave-equation
12.2.3 Equivalent circuit of the velocity-saturated MOSFET wave-equation
12.2.4 High-frequency performance of the short-channel MODFET
12.2.5 Alternate equivalent circuit for the short-channel MODFET
12.3 Large-signal model for the short-channel MOSFET
12.3.1 First-order non-quasi-static approximation
12.3.2 Small-signal equivalent circuit for the D” internal node
12.3.3 Large-signal model
12.3.4 Charge-based representation
12.3.5 Charge conservation
12.3.6 Model topology
12.4 Conclusion
12.5 Bibliography
12.6 Problems
13 DC and microwave electrothermal modeling of FETs
13.1 Introduction
13.2 Modeling for power amplifier design
13.3 Physical versus table-based models
13.4 Device characterization
13.4.1 DC I?V?T
13.4.2 Pulsed I?V characteristics
13.4.3 Isothermal I?V characteristics
13.5 Small-signal modeling
13.5.1 Microwave data acquisition
13.5.2 Small-signal topology
13.5.3 Parasitic deembedding
13.6 Large-signal modeling
13.6.1 Model formulation
13.6.2 Tensor product B-splines
13.6.3 I?V characteristics
13.6.4 Parasitic bipolar topologies
13.6.5 Charge
13.7 Electrothermal modeling
13.8 Circuit simulations
13.8.1 Pulsed I?V characteristics
13.8.2 Power amplifier
13.9 Conclusion
13.10 Bibliography
13.11 Problems
14 Analytical DC analysis of short-gate MODFETs
14.1 Introduction
14.2 Background to the FET DC modeling approach
14.3 Brief semiconductor materials history for SBGFETs
14.4 2DEG gate charge control in a heavily dual pulse-doped MODFET structure
14.5 An analytically manageable 2DEG transport model
14.6 Quasi-two-dimensional model for electrostatics and I?V characteristics
14.6.1 The low-field gradual channel
14.6.2 Source, drain and contact resistances
14.6.3 The high-field velocity-saturated region
14.6.4 Impact ionization in the channel and gate tunneling
14.6.5 Application examples and some large-signal issues
14.7 Reliability
14.8 Conclusion
14.9 Bibliography
14.10 Problems
15 Small-signal AC analysis of the short-gate velocity-saturated MODFET
15.1 Introduction
15.2 Equivalent circuit for the intrinsic device
15.3 Displacement currents
15.4 Conduction-induced currents and delays
15.5 Y parameters and equivalent circuit for the extrinsic device
15.6 Conclusion
15.7 Bibliography
15.8 Problems
16 Gate resistance and the Schottky-barrier interface
16.1 Introduction
16.2 Components in the input resistance
16.3 Measurement and scaling of the gate resistance
16.4 Interfacial gate resistance and Schottky barriers
16.5 Admittance analysis of a Schottky barrier with semiconductor surface states
16.6 Theory for the interfacial tunneling resistance
16.6.1 General formalism for tunneling between metal and surface states
16.6.2 Interfacial tunneling barrier
16.6.3 Metal wave-function tail and tunneling effective mass
16.6.4 Surface-state wave-function
16.6.5 Tunneling resistance and capture cross-section
16.7 Application to various Schottky-barrier models
16.8 Summary and modifications to the equivalent circuit and Y-parameters
16.9 Conclusion
16.10 Bibliography
16.11 Problems
17 MODFET high-frequency performance
17.1 Introduction
17.2 Some high-frequency measurement issues
17.3 Recap of procedure and parameters for calculating MODFET Y parameters
17.4 Current gain, optimum power gain and cut-off frequencies
17.5 Optimization of fmax
17.6 Noise, noise figure and associated gain
17.6.1 The FET noise model by Pucel, Haus and Statz
17.6.2 The Fukui equation and Pospieszalski?s thermal model
17.6.3 General formalism for noise figure and power gain
17.6.4 Noise figure and associated gain of the MODFET
17.7 Process and manufacturability issues
17.8 Reverse modeling
17.9 Conclusion
17.10 Bibliography
17.11 Problems
18 Modeling high-performance HBTs
18.1 Introduction
18.2 Microscopic modeling of HBTs
18.2.1 Introduction
18.2.2 Direct solution of the BTE
Components of the distribution function
Profiles of electron concentration and velocity
Collector current
18.3 Compact modeling of HBTs
18.3.1 Introduction
18.3.2 Compact models for the collector current
Graded-emitter HBTs
Abrupt-junction HBTs
18.3.3 Compact models for fT
The charge-control method
Regional signal-delay expressions
Emitter delay
Base delay
Collector delay
18.3.4 Compact models for fmax
Base?collector network
Extrapolated fmax
18.3.5 Compact model for large-signal analysis
An Ebers?Moll model
Thermal considerations
18.4 Conclusion
Acknowledgement
18.5 Bibliography
18.6 Problems
19 Practical high-frequency HBTs
19.1 Introduction
19.2 Material choices for HBTs
19.2.1 History and evolution
19.2.2 Growth techniques
19.3 Processing techniques and device design
19.3.1 Introduction
19.3.2 III?V processing technology
19.4 Further discussion of fT, fmax
19.4.1 Origin and distribution of delay times
19.4.2 Improvement of delay times
19.5 III?V surfaces and the emitter base saddle-point
19.6 Thermal considerations
19.7 Reliability issues
19.7.1 Introduction
19.7.2 The beryllium diffusion problem
19.7.3 Beryllium diffusion solutions
19.8 Conclusion
Acknowledgement
19.9 Bibliography
19.10 Problems
Index

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