Advanced Nanoscale MOSFET Architectures Current Trends and Future Perspectives 1st Edition by Kalyan Biswas, Angsuman Sarkar 1394188943 9781394188949

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ISBN 10: 1394188943 

ISBN 13: 9781394188949

Author: Kalyan Biswas, Angsuman Sarkar

Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology.

The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs.

Additional topics covered include:

• High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification
• Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives
• TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications
• Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications

Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.

Table of contents:

1 Emerging MOSFET Technologies

1.1 Introduction: Transistor Action

1.2 MOSFET Scaling

1.3 Challenges in Scaling the MOSFET

1.4 Emerging MOSFET Architectures

1.5 Organization of this Book

References

2 MOSFET: Device Physics and Operation

2.1 Introduction to MOSFET

2.2 Advantages of MOSFET

2.3 Applications of MOSFETs

2.4 Types of MOSFETs

2.5 Band Diagram of MOSFET

2.6 MOSFET Regions of Operation

2.7 Scaling of MOSFET

2.8 Short‐channel Effects

2.9 Body Bias Effect

2.10 Advancement of MOSFET Structures

References

3 High‐κ Dielectrics in Next Generation VLSI/Mixed Signal Circuits

3.1 Introduction to Gate Dielectrics

3.2 High‐κ Dielectrics in Metal–Oxide–Semiconductor Capacitors

3.3 High‐κ Dielectrics in Metal Insulator Metal (MIM) Capacitors

3.4 MOSFETs Scaling and the Need of High‐κ

3.5 High‐κ Dielectrics in Next Generation Transistors

References

4 Consequential Effects of Trap Charges on Dielectric Defects for MU‐G FET

4.1 Introduction

4.2 TID Effects Overview

4.3 Application Area of Device for TID Effect Analysis

4.4 Near the Earth: Trapped Radiation

4.5 Ionizing Radiation Effect in Silicon Dioxide (SiO2)

4.6 TID Effects in CMOS

4.7 TID Effects in Bipolar Devices

4.8 Understanding and Modeling a‐SiO2 Physics

4.9 Hydrogen (H2) Reaction with Trapped Charges at Insulator

4.10 Pre‐Existing Trap Density and their Respective Location

4.11 Use of High‐K Dielectric in MU‐G FET

4.12 Properties of Trap in the High‐K with Interfacial Layer

4.13 Trap Extraction Techniques

4.14 Conclusion

References

5 Strain Engineering for Highly Scaled MOSFETs

5.1 Introduction

5.2 Simulation Approach

5.3 Case Study

5.4 Conclusions

References

6 TCAD Analysis of Linearity Performance on Modified Ferroelectric Layer in FET Device with Spacer

6.1 Introduction

6.2 Simulation and Structure of Device

6.3 Results and Analysis

6.4 Conclusion

Acknowledgment

References

7 Electrically Doped Nano Devices: A First Principle Paradigm

7.1 Introduction

7.2 Electrical Doping

7.3 First Principle

7.4 Molecular Simulation

7.5 Conclusion

References

8 Tunnel FET: Principles and Operations

8.1 Introduction to Quantum Mechanics and Principles of Tunneling

8.2 Tunnel Field‐Effect Transistor

8.3 Challenges of Tunnel Field‐Effect Transistor

8.4 Techniques for Improving Electrical Performance of Tunnel Field‐Effect Transistor

8.5 Conclusion

References

9 GaN Devices for Optoelectronics Applications

9.1 Introduction

9.2 Properties of GaN‐Based Material

9.3 GaN LEDs

9.4 GaN Lasers

9.5 GaN HEMTs for Optoelectronics

9.6 GaN Sensors

References

10 First Principles Theoretical Design on Graphene‐Based Field‐Effect Transistors

10.1 Introduction

10.2 Graphene

10.3 Graphene/ ‐BN Hybrid Structure

10.4 Conclusions

Acknowledgments

References

11 Performance Analysis of Nanosheet Transistors for Analog ICs

11.1 Introduction

11.2 Evolution of Nanosheet Transistors

11.3 TCAD Modeling of Nanosheet Transistor

11.4 Transistor’s Analog Performance Parameters

11.5 Challenges and Perspectives of Modern Analog Design

References

12 Low‐Power Analog Amplifier Design using MOS Transistor in the Weak Inversion Mode

12.1 Introduction

12.2 Review of the Theory of Weak Inversion Mode Operation of MOS Transistor

12.3 Design Steps for Transistor Sizing Using the IC

12.4 Design Examples

12.5 Summary

References

13 Ultra‐conductive Junctionless Tunnel Field‐effect Transistor‐based Biosensor with Negative Capacitance

13.1 Introduction

13.2 Importance of SS and I ON/I OFF in Biosensing

13.3 Importance of Dopingless Source and Drain in High Conductivity

13.4 Relation of Negative Capacitance with Non‐hysteresis and Effect on Biosensing

13.5 Variation of Source Material on Biosensing

13.6 Importance of Dual Gate and Ferroelectricity on Biosensing

13.7 Effect of Dual Material Gate on Biosensing

References

14 Conclusion and Future Perspectives

14.1 Applications

14.2 Some Recent Developments

14.3 Future Perspectives

14.4 Conclusion

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Tags: Kalyan Biswas, Angsuman Sarkar, Advanced, Nanoscale