Measurement and Modeling of Silicon Heterostructure Devices 1st Edition by John Cressler 1420066927 9781420066920
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Product details:
ISBN 10: 1420066927
ISBN 13: 9781420066920
Author: John D. Cressler
When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
Table of contents:
1 The Big Picture
2 A Brief History of the Field
3 Overview: Measurement and Modeling
4 Best-Practice AC Measurement Techniques
5 Industrial Application of TCAD for SiGe Development
6 Compact Modeling of SiGe HBTs: HICUM
7 Compact Modeling of SiGe HBTs: Mextram
8 CAD Tools and Design Kits
9 Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs
10 Transmission Lines on Si
11 Improved De-Embedding Techniques
A.1 Properties of Silicon and Germanium
A.2 The Generalized Moll-Ross Relations
A.3 Integral Charge-Control Relations
A.4 Sample SiGe HBT Compact Model Parameters
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Tags: John Cressler, Measurement, Modeling, Heterostructure, Devices