Semiconductor Manufacturing Technology 1st Edition by Chue San Yoo 9813106719 9789813106710

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ISBN 10: 9813106719

ISBN 13: 9789813106710

Author: Chue San Yoo

This textbook contains all the materials that an engineer needs to know to start a career in the semiconductor industry. It also provides readers with essential background information for semiconductor research. It is written by a professional who has been working in the field for over two decades and teaching the material to university students for the past 15 years. It includes process knowledge from raw material preparation to the passivation of chips in a modular format.

Semiconductor Manufacturing Technology 1st Table of contents:

1. OVERVIEW

1.1. Classification of Materials

1.2. Evolution of Integrated Circuit (IC) Industry

1.3. From Design to Chips

1.4. The Wafer Substrate Manufacturing Flow

1.5. Wafer Processing Flow

1.6. What Is the Semiconductor Industry Trying to Achieve?

1.7. The Never-Ending E.ort — Yield Improvement

2. BUILDING BLOCKS FOR INTEGRATED CIRCUITS

2.1. Fundamental Semiconductor Concepts

2.1.1. Energy band theory and chemical bonding theory

2.1.2. Doping of a semiconductor element

2.1.3. Mobility

2.1.4. Resistivity

2.2. Resistors

2.3. The pn Junctions

2.4. Capacitors

2.5. The MOS Transistor

2.6. Integrated Circuits

3. THERMAL OXIDATION

3.1. Introduction

3.2. Oxidation Mechanism and Modeling

3.2.1. Macroscopic modeling

3.2.1.1. Case 1

3.2.1.2. Case 2

3.2.2. Microscopic modeling

3.3. Isolation Technology

3.4. Gate Oxide

3.5. Cleaning before Thermal Oxidation

4. GAS KINETICS AND PLASMA PHYSICS

4.1. Gas Kinetics and Ideal Gases

4.1.1. Ideal gas law

4.1.2. The mean traveling speed of a gas molecule

4.1.3. Collision frequency and mean free path

4.2. What Is Plasma? How Is It Formed?

4.3. Introduction to Plasma Physics

4.4. Electron Impact Phenomena

4.5. Fundamental Plasma Reactor Configurations

4.6. Magnetic Field Confinement

5. CHEMICAL VAPOR DEPOSITION

5.1. Classification of CVD Reactors and Films

5.2. CVD Reactor Design Concepts

5.3. CVD Reactor Modeling

5.3.1. Macroscopic modeling

5.3.2. Microscopic modeling

5.4. Characterization of Thin Films

5.5. Applications of CVD Films

6. PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION AND ETCHING

6.1. The Plasma Reaction Pathways and SystemVariables

6.2. Introduction to PECVD and Film Characterization

6.3. Applications of PECVD Films

6.3.1. PECVD oxide

6.3.2. PECVD nitride

6.3.3. PETEOS

6.4. Introduction to Plasma Etching

6.5. Applications of Plasma Etching

6.5.1. Polysilicon gate etching

6.5.2. Tungsten polycide etching

6.5.3. Tungsten etching

6.5.4. Dielectric layer etching

6.5.5. Spacer etching

6.5.6. Silicided contact etching

6.5.7. Aluminum metal etching

6.5.8. Chromium etching

6.5.9. Resist ashing

6.6. Plasma-Enhanced CVD and Etching Reactor Modeling

7. PATTERN TRANSFER: PHOTOLITHOGRAPHY

7.1. Introduction

7.2. Preexposure Steps

7.2.1. Priming

7.2.2. Resist coating

7.2.3. Soft baking

7.3. Resist Chemistry

7.4. Fundamentals of Image Formation

7.4.1. Exposure wavelength

7.4.2. Lens imperfections

7.4.3. Interference

7.4.4. Depth of focus

7.4.5. Coherence

7.4.6. Optical transfer function

7.5. The Exposure System Evolution and Photoprocess Variations

7.6. Postexposure Steps

7.6.1. Postexposure bake

7.6.2. Developing and hard bake

8. PATTERN GENERATION

8.1. Introduction

8.2. Electron Beam Writing and Resists

8.2.1. The e-beam system

8.2.2. The e-beam resist

8.3. Back-End Processing for Mask Making

8.3.1. The mask inspection

8.3.2. The mask repair

8.3.3. Mask cleaning

8.3.4. Pellicle mounting

8.4. Resolution Enhancement Technology

8.4.1. Phase shifting mask technology

8.4.2. Off-axis illumination

8.4.3. Optical proximity correction

8.4.4. Subresolution assist features

9. DOPING TECHNOLOGY

9.1. Introduction

9.2. Dopant Diffusion

9.3. Ion Implantation

9.4. Implant Damages and Annealing

9.5. Applications of Doping Technology

10. METALLIZATION AND SILICIDATION

10.1. Introduction

10.2. Sputtering Systems

10.3. AluminumMetal System

10.3.1. Barrier metal systems

10.3.2. Antireflective coatings

10.4. Meeting the Step Coverage Requirements

10.5. Why Silicides?

11. PLANARIZATION AND CMP TECHNOLOGY

11.1. Introduction

11.2. Interlayer Dielectrics

11.2.1. CMP and dummy patterns

11.3. Spin on Glass

11.4. Intermetal Dielectrics

11.4.1. Planarization for passivation

11.5. Introduction to Chemical Mechanical Polishing and Its Applications

11.5.1. Introduction to CMP

11.5.2. CMP application

11.5.2.1. Oxide CMP

11.5.2.2. Tungsten CMP

11.5.2.3. Copper CMP

11.6. CMPModeling

12. COPPER AND LOW-k

12.1. Back-End Processes

12.2. Cu Wiring

12.2.1. The barrier layer for copper

12.2.2. The copper seed layer

12.2.3. The bulk copper growth

12.2.4. The ECD system

12.2.5. The additives for the ECD bath

12.2.6. Post-ECD anneal

12.3. Low-k Dielectrics

12.4. Integration of Copper and Low-k Materials

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