Silicon Epitaxy 1st Edition by Danilo Crippa, Rossi, Daniel Rode, Willardson, Eicke Weber 9780080541006

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ISBN 13: 9780080541006
Author: Danilo Crippa, J. A. Rossi, Daniel L. Rode, R. K. Willardson, Eicke R. Weber

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series’ tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Silicon Epitaxy 1st Table of contents:

1: CVD Technologies for Silicon: A Quick Survey

2: Epitaxial Growth Theory: Vapor-Phase Chemistry and Doping

3: Epitaxial Growth Facilities, Equipment, and Supplies

4: Epitaxial Growth Techniques

5: Epitaxial Growth Techniques: Molecular Beam Epitaxy

6: Epitaxial Growth Modeling

7: Epitaxial Layer Characterization and Metrology

8: Epitaxy for Discretes and Power Devices

9: Epitaxy on Patterned Wafers

10: Si-Based Alloys: SiGe and SiGe:C

11: Silicon Epitaxy: New Applications

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Danilo Crippa,Rossi,Daniel Rode,Willardson,Eicke Weber,Silicon Epitaxy