Silicon Germanium Strained Layers and Heterostructures 2nd Edition by Jain, Willander 0127521836 9780127521831

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Product details:

ISBN 10: 0127521836 

ISBN 13: 9780127521831

Author: S.C. Jain, M. Willander

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices.

Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.

* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
* Appropriate for students and senior researchers

Table of contents:

Chapter 1. Introduction
1.1 Development of SiGe technology
1.2 Commercial production of SiGe devices
1.3 Landmarks in the development of SiGe devices

Chapter 2. Strain, stability, reliability and growth
2.1 Strain and dislocations
2.2 Strain and dislocation energies
2.3 Critical thickness
2.4 Stability of strained layers
2.5 Stresses in quantum structures
2.6 Poly-SiGe and poly-SiGeC films
2.7 Growth of strain relaxed layers

Chapter 3. Mechanism of strain relaxation
3.1 Introduction
3.2 Propagation of dislocations
3.3 Nucleation, multiplication and blocking
3.4 Strain relaxation
3.5 Summary

Chapter 4. Strain, growth, and TED in SiGeC layers
4.1 Introduction
4.2 Strain and Growth of Si₁₋ₓ₋ᵧGeₓCᵧ layers
4.3 Thermal diffusion
4.4 TED and its suppression by carbon
4.5 Modelling of TED in Si₁₋ₓ₋ᵧGeₓCᵧ layers
4.6 Conclusion and summary

Chapter 5. Bandstructure and related properties
5.1 Effect of strain on bandstructure
5.2 Effective Density of States and Fermi energy
5.3 Bandgap narrowing due to heavy doping
5.4 Mobility
5.5 Electrical properties of SiGeC films
5.6 Optical properties of unstrained alloys
5.7 Optical studies of strained layers
5.8 Optical studies of quantum wires and dots
5.9 Superlattices (SLs)

Chapter 6. Heterostructure Bipolar Transistors
6.1 Introduction
6.2 Design
6.3 Technology
6.4 DC performance of SiGe HBTs
6.5 AC characteristics of the HBTs
6.6 Optimization of BV₍ceo₎, fₜ and fₘₐₓ
6.7 HBTs with SiGeC base-layers
6.8 Noise
6.9 Circuit applications
6.10 Summary

Chapter 7. FETs and other devices
7.1 Ge channel MOS transistors
7.2 Strained layer p-channel MOSFETs
7.3 Strained layer n-channel MOSFETs
7.4 Modulation doped Field Effect Transistors
7.5 Strained-layer MOSFETs on insulator
7.6 High-k gate-insulators
7.7 MOSFETs containing Si₁₋ₓ₋ᵧGeₓCᵧ alloys
7.8 Ultra-shallow junctions
7.9 Application of SiGe to ultrashallow junctions
7.10 Resonant tunnelling diodes
7.11 Photodetectors, waveguide switch and laser

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Tags: Jain, Willander, Germanium, Silicon, Strained