RF and Microwave Semiconductor Device Handbook 1st Edition by Mike Golio 1498798047 9781498798044

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ISBN 10: 1498798047

ISBN 13: 9781498798044

Author: Mike Golio

Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

RF and Microwave Semiconductor Device Handbook 1st  Table of contents:

1 Varactors

1.1 Introduction

1.2 Basic Concepts

1.3 Varactor Applications

1.4 Varactor Devices

2 Schottky Diode Frequency Multipliers

2.1 Introduction

2.2 Schottky Diode Characteristics

2.3 Analytic Descriptions of Diode Multipliers

2.4 Computer-Based Design Approaches

2.5 Device Limitations and Alternative Device Structures

2.6 Summary and Conclusions

3 Transit Time Microwave Devices

3.1 Introduction

3.2 Semiconductor Material Properties

3.3 Two-Terminal Active Microwave Devices

Defining Terms

4 Bipolar Junction Transistors

4.1 Introduction

4.2 Basic Operation

5 Heterostructure Bipolar Transistors

5.1 Basic Device Principle

5.2 Base Current Components

5.3 Kirk Effects

5.4 Collapse of Current Gain

5.5 High Frequency Performance

5.6 Device Fabrication

6 Metal-Oxide-Semiconductor Field-Effect Transistors

6.1 Introduction

6.2 MOSFET Fundamentals

6.3 CMOS at Radio Frequencies

6.4 MOSFET Noise Sources

6.5 MOSFET Design for RF Operation

6.6 MOSFET Layout

6.7 The Future of CMOS

7 Metal Semiconductor Field Effect Transistors

7.1 Introduction

7.2 Principle of Operation

7.3 Properties of Semiconductor Materials Used in MESFET Technology

7.4 Schottky Barrier Contacts

7.5 MESFET Technology

7.6 MESFET Modeling

7.7 Hetero-Dimensional (2D MESFETs)

7.8 Applications

8 High Electron Mobility Transistors

8.1 Introduction

8.2 HEMT Device Operation and Design

8.3 Scaling Issues in Ultra-High-Speed HEMTs

8.4 Material Systems for HEMT Devices

8.5 AlGaAs/InGaAs/GaAs Pseudomorphic HEMT (GaAs pHEMT)

8.6 AlInAs/GaInAs/InP (InP HEMT)

8.7 Technology Comparisons

8.8 Conclusion

9 RF Power Transistors from Wide Bandgap Materials

9.1 Introduction

9.2 Figures of Merit for RF Power Transistors

9.3 Common RF Power Devices from Wide Bandgap Materials

9.4 Desirable Material Properties for RF Power Transistors

9.5 State-of-the-Art Wide Bandgap Microwave Transistor Data

9.6 Challenges to Production

9.7 Conclusion

10 Monolithic Microwave IC Technology

10.1 Overview

10.2 Basic Principles of GaAs MESFETs and HEMTs

10.3 MMIC Lumped Elements: Resistors, Capacitors, and Inductors

10.4 MMIC Processing and Mask Sets

Defining Terms

11 Semiconductors

11.1 Introduction

11.2 Silicon

11.3 Gallium Arsenide

11.4 III-V Heterostructures

11.5 Indium Phosphide

11.6 Silicon Carbide

11.7 Gallium Nitride

11.8 Selected Material Properties

11.9 Etching Processes for Semiconductors

11.10 Ohmic and Schottky Contacts

12 Metals

12.1 Introduction

12.2 Resistance, Resistivity, and Conductivity

12.3 Skin Depth

12.4 Heat Conduction

12.5 Temperature Expansion

12.6 Chemical Properties

12.7 Weight

13 RF Package Design and Development

13.1 Introduction

13.2 Thermal Management

13.3 Mechanical Design

13.4 Package Electrical and Electromagnetic Modeling

13.5 Design Verification, Materials, and Reliability Testing

13.6 Computer-Integrated Manufacturing

13.7 Conclusions

14 Thermal Analysis and Design of Electronic Systems

14.1 Motivation

14.2 Thermal Modeling

14.3 Thermal Resistance Networks

15 Low Voltage/Low Power Microwave Electronics

15.1 Introduction

15.2 Motivations for Reduced Voltage

15.3 Semiconductor Materials Technology

15.4 Semiconductor Device Technology

15.5 Circuit Design

15.6 Radio and System Architecture

15.7 Limits to Reductions in Voltage

15.8 Summary

16 Technology Computer Aided Design

16.1 Introduction

16.2 An Overview of TCAD

16.3 Benefits of TCAD

16.4 Limitations of TCAD

16.5 The Role of Calibration

16.6 Applications of TCAD

16.7 Application Protocols

16.8 Conclusions

17 Nonlinear Transistor Modeling for Circuit Simulation

17.1 Modeling in General

17.2 Scope of This Work

17.3 Equivalent Circuit Models

17.4 SPICE Models and Application-Specific Models

17.5 Improved Transistor Models for Circuit Simulation

17.6 Modeling Gate Charge as a Function of Local and Remote Voltages in MESFETS and PHEMTS

17.7 Modeling the Effects Due to Traps

17.8 Modeling Temperature Effects and Self-Heating

17.9 Enhancing the Gummel-Poon Model for Use with GaAs and InP HBTs

17.10 Modeling the RF LDMOS Power Transistor

17.11 Parameter Extraction for Analytical Models

17.12 The Vector Nonlinear Network Analyzer

17.13 Model Verification

17.14 Foundry Models and Statistics

17.15 Future Nonlinear Transistor Models

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